inchange semiconductor isc product specification isc silicon npn power transistor BU2508D description collector-emitter sustaining voltage- : v ceo(sus) = 700v (min) high switching speed built-in damper diode applications designed for use in horizontal deflection circuits of color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 7.5 v i c collector current- continuous 8 a i cm collector current-peak 15 a i b b base current- continuous 4 a i bm base current-peak 6 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU2508D electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0,l= 25mh 700 v v (br)ebo emitter-base breakdown voltage i e = 600ma; i c = 0 7.5 v v ce (sat)-1 collector-emitter saturation voltage i c = 4.5a; i b = 1.1a 5.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 4.5a; i b = 1.29a 1.0 v v be (sat) base-emitter saturation voltage i c = 4.5a; i b = 1.7a 1.3 v i ces collector cutoff current v ce = 1500v ; v be = 0 v ce = 1500v ; v be = 0; t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 7.5v; i c = 0 140 390 ma h fe-1 dc current gain i c = 1a ; v ce = 5v 7 23 h fe-2 dc current gain i c = 4.5a ; v ce = 1v 4 v ecf c-e diode forward voltage i f = 4.5a 2.0 v c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 80 pf switching times t stg storage time 6.0 s t f fall time i c = 4.5a , i b( end ) = 1.1a; l b = 6 h -v bb = 4v; (-di b /dt= 0.6a/ s) 0.6 s isc website www.iscsemi.cn 2
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